Memory repair method and apparatus based on error code tracking

ABSTRACT

A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.15/829,682, filed Dec. 1, 2017, entitled MEMORY REPAIR METHOD ANDAPPARATUS BASED ON ERROR CODE TRACKING, which is a Continuation of U.S.patent application Ser. No. 15/250,677, filed Aug. 29, 2016, entitledMEMORY REPAIR METHOD AND APPARATUS BASED ON ERROR CODE TRACKING, nowU.S. Pat. No. 9,836,349, which is a Non-Provisional that claims priorityto U.S. patent application Ser. No. 14/285,481, filed May 22, 2014,entitled MEMORY REPAIR METHOD AND APPARATUS BASED ON ERROR CODETRACKING, now U.S. Pat. No. 9,430,324, which is a Non-Provisional thatclaims priority to U.S. Provisional Application No. 61/827,383, filedMay 24, 2013, entitled MEMORY REPAIR METHOD AND APPARATUS BASED ON ERRORCODE TRACKING, all of which are incorporated herein by reference intheir entirety.

TECHNICAL FIELD

The disclosure herein relates to memory systems, and more specificallyto in-system memory repair apparatus and methods.

BACKGROUND

Error codes are used in a variety of signaling systems to detect and, insome cases, correct errors relating to data transmission and storage.The codes generally provide redundancy to the original data so that,when the data is encoded via a particular error code algorithm, alimited number of data errors may be identified and possibly correctedupon decoding. The redundant portions of the encoded data may take theform of checksums, parity bits, or the like, depending on the type oferror code employed.

For memory systems that employ error codes, the overhead often employedwith the encoding generally limits the effectiveness of the code to asingle-bit error in a given word. As a result, only a certain number ofhard errors, such as those caused by storage cell failures, may beacceptable for a given memory component before the component fails as areliable device. The failures become even more costly when memorydevices are assembled onto memory modules, and the modules discarded forfailing to pass final testing.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the disclosure are illustrated by way of example, and notby way of limitation, in the figures of the accompanying drawings and inwhich like reference numerals refer to similar elements and in which:

FIG. 1 illustrates one embodiment of a memory system that employs amemory controller and multiple memory modules.

FIG. 2 illustrates one embodiment of a buffered memory module that maybe used with the memory system of FIG. 1.

FIG. 3 illustrates an embodiment of a buffer for use with the memorymodule of FIG. 2, and further detail associated with specificembodiments of respective data and control/address circuits employed inthe buffer.

FIG. 4 illustrates a flowchart of steps that define one embodiment of amethod of operation in a memory module.

FIG. 5 illustrates a flowchart of steps that provide further detail ofthe error tracking and repair step of FIG. 4.

FIG. 6 illustrates multiply and divide tables for one embodiment of anerror encoder for use in the buffer of FIG. 3.

FIG. 7 illustrates a Kij coefficient table for one embodiment of anerror encoder for use in the buffer of FIG. 3.

FIG. 8 illustrates an alternative embodiment of a buffered modulesimilar to the embodiment of FIG. 2.

DETAILED DESCRIPTION

Embodiments of memory systems, modules, buffer devices and memorydevices, and associated methods are disclosed herein. One embodiment ofa memory module includes a substrate, a memory device that outputs readdata, and a buffer. The buffer has a primary interface for transferringthe read data to a memory controller and a secondary interface coupledto the memory device to receive the read data. The buffer includes errorlogic to identify an error in the received read data and to identify astorage cell location in the memory device associated with the error.Repair logic maps a replacement storage element as a substitute storageelement for the storage cell location associated with the error. Thisin-module repair capability prevents hard errors from recurring, therebypreserving the error correction capability for detecting and correctingone or more other errors. Moreover, by incorporating the repaircapability in a buffer circuit on the memory module, the memory deviceand memory controller designs may remain unchanged, while the memorysystem benefits from the additional layer of error correctioncapability.

In a further embodiment, a method of operation in a memory module isdisclosed. The method includes accessing a read data word in a group ofstorage cells in response to a read operation request from a memorycontroller. The read data word is then transferred from the group ofstorage cells along a secondary data bus and buffered. The bufferingincludes determining whether an error exists in the read data word andrepairing a failure associated with the error. Information regarding therepairing is stored for a subsequent read operation. The buffered readdata word is transferred to a memory controller along a primary data busas the determining and repairing takes place in the buffer.

In yet another embodiment, a method of operation in a memory module isdisclosed. The method includes receiving data from a memory controlleralong primary data paths and buffering the received data. The bufferingincludes comparing addresses associated with the data to stored addressinformation associated with known failures. If the comparing identifiesa correlation between the data addresses and the stored addressinformation, a data bit corresponding to the correlation is extractedfrom the data word and stored in a substitute storage location. The datais then transferred for storage in a memory device along secondary datapaths.

Referring to FIG. 1, one embodiment of a buffered memory architecture,generally designated 100, employs multiple memory modules 102 and 104coupled to a primary bus 106 that transfers data, command and addresssignals. Memory control circuitry 108 in the form of a memory controller110 is also coupled to the primary bus 106 to direct data transfersbetween the modules 102 and 104 and the memory control circuitry 108.The memory control circuitry may include, e.g., a discrete memorycontroller separate from a requestor integrated circuit (IC), or any ICthat controls a DRAM and could be any type of system-on-chip (SoC).

With continued reference to FIG. 1, one embodiment of the memorycontroller 108 employs error correction code (ECC) circuitry 110 thatdetects and corrects read data errors before passing the data to a Level3 cache 112. The ECC circuitry 110 generally includes a write data ECCencoder 114 and a read data decoder 116. An interface 118 couples thememory controller 108 to the modules 102 and 104. ECC parity bitsgenerated by the write data encoder 114 are passed along with theoriginal data to the memory modules along the primary bus 106, and readback with the data for use in decoding read data in the read datadecoder 116. The data encoding may be generated in accordance with oneof many acceptable ECC algorithms including, for example,straightforward single-bit Hamming codes, to more sophisticatedhigh-speed BCH (Bose, Ray-Chaudhuri and Hocquenghem) codes. Other ECCcodes, such as Reed-Solomon codes, turbo codes, cyclic redundancy codes(CRC) and low density parity check (LDPC) codes may also be acceptable.For one specific embodiment, a “Chipkill” code is employed that iscapable of correcting a single random error or four-bit burst error in a128-bit word.

Further referring to FIG. 1, the embodiment shown illustrates amulti-drop bus, where the primary bus 106 is shared by the modules 102and 104. Point-to-point topologies are also envisioned, but notillustrated. The modules each include respective buffer circuits 120 and122 and memory devices 124A-124N and 126A-126N. The buffer circuits 120and 122 isolate the memory devices from the primary bus for each module.Thus, instead of the multiple memory devices for each module loading thebus, only the buffer circuits load the bus. This minimizes capacitiveloading on the shared primary bus, among other things. As explained morefully below, the buffer circuits 120 and 122 may also employ ECCcircuitry to identify and repair “hard” errors associated with one ormore of the various memory devices. For one embodiment, the erroridentification and repair is done in a manner wholly transparent to thememory controller 108, thus providing an additional layer of errorcorrection capability that maximizes the ECC strength, or correctioncapability, of the coding carried out by the memory controller 108.

FIG. 2 illustrates additional detail for one embodiment of a memorymodule, generally designated 200, that corresponds to the memory modules102 and 104 of FIG. 1. Each module 200 includes a substrate 202 having afront face 204 that mounts a plurality of memory devices 206. In someembodiments, the memory devices may organized as “ranks”. Typically, arank corresponds to a set of separately addressable memory devices usedfor a single memory access. Thus, for the example shown in FIG. 2, thememory devices are organized into a single rank 208. Each memory device206 may be realized as a single memory chip, or packaged to includeplural memory die 210 in a stacked configuration (shown in phantom). Insome embodiments, an additional set of memory devices may be mounted onthe back face of the module, and organized as an additional rank.

Further referring to FIG. 2, for one embodiment, the rank 208 of memorydevices 206 couples to respective buffer circuits 212 and 214 viasecondary data bus paths 216 and 218. Each buffer circuit 212 and 214,in turn, interfaces with a memory controller (not shown) through aprimary bus 220. Secondary command buses 222 and 224 route commandsignals from each buffer circuit 212 and 214 to the memory devices 206in a “fly-by” manner. A portion of a private bus 226, described morefully below, enables the buffer circuits 212 and 214 to communicatebetween each other. While two buffer circuits are shown in FIG. 1, thebuffer circuitry may take many different forms, including, for example,a single buffer chip for sharing across all of the memory devices, or aseparate buffer chip for each memory device as explained in furtherdetail below.

With continued reference to FIG. 2, one embodiment of the module 200includes memory 228 to store error information, as more fully explainedbelow. The memory may take the form of a nonvolatile memory devicecoupled to the buffer circuits 212 and 214 to store the errorinformation associated with errors determined during module manufacture,or during normal memory system operation.

Referring now to FIG. 3, further details for a specific embodiment of abuffer circuit 300 corresponding to those described in FIG. 2 are shown.As noted above, to enhance the error correction capabilities of thememory system, the buffer circuit 300 employs error detection decodingcircuitry that is based on the error correction coding carried out bythe memory controller 108 in coding write data words for transfer aswrite data to the memory devices. While the description that follows isimplementation-specific, it is to be understood that a variety of errordetection and/or correction schemes may be employed to achieve the errordetection and repair functions described herein.

In one specific embodiment, and with continued reference to FIG. 3,plural error decoders 302A-302N and a command/address (C/A) repaircircuit 304 are formed in each buffer 300. Each error decoder includes acopy, or “slice” of the resources needed to accomplish error detectionwith respect to a read data word transferred from a given memory device.The C/A repair circuit 304 evaluates error information generated by theerror decoders and may assign substitute storage locations to replacedefective storage locations corresponding to the detected errors. Asexplained more fully below, error information generated by each decoderpasses to an adjacent decoder 302A-302N in a pipelined manner along aprivate bus 306 to the C/A repair circuit 304. In this manner, the errordecoders form a series of stages along the private bus.

For the following error detection and repair circuitry descriptionsbelow, the specific error coding algorithm employed to encode the datais a “Chipkill” error correction code having a (144, 128) format capableof correcting a single random error, or a four-bit burst error in a128-bit word. A total of 144 bits are generated from a coding of a128-bit data word, with the result being the original 128-bit datainterspersed with 16 parity bits that, when decoded, generate an errorsyndrome. Similar Hamming-type coding schemes may be extended to 512 bitdata chunks (576, 512), or higher. In general, decoding the syndromefollowing receipt of a data word allows for the detection of an error,and provides a pointer to the location of the error in the word. Bydetecting errors in the buffer, defective storage cells that form thebasis for “hard” errors may be repaired for subsequent data reads to thedefective cells. This ensures that the error correction coding generatedat the controller does not become overwhelmed by errors that may developover time, thereby maintaining its error coding strength. Further, byhandling the error detecting and repair in the buffer, minimal changesto the circuitry in the memory device and/or controller are needed toachieve the desired error tracking and repair functionality.

Further referring to FIG. 3, one embodiment of the error decoder 302Aemployed by the buffer 300 includes a data transfer path 308, oftenreferred to as a “DQ” path, and respective primary and secondary datainterface circuits DQp and DQs. The primary interface circuit DQp sendsand receives data to and from a portion of the primary data paths thatcouple the buffer 300 to the memory controller 108 (FIG. 1). Thesecondary interface circuit DQs sends and receives data to and from aportion of the secondary data paths that couple the buffer 300 to agiven memory device 206 (FIG. 2). In one specific embodiment, the datatransfer path 308 is 4-bits wide, to correspond to a 4-bit wide memorydevice. Other widths may be straightforwardly be employed, depending onthe corresponding memory device widths and the application involved.

Coupled to the data transfer path 308 are plural syndrome generationcircuits 310A-310D. Each syndrome generation circuit includes a paritybit path 312 to route a portion of the overall parity bits (for thisspecific example, 4 bits) to a multiplier 314. A Kij polynomialcoefficient register 316 provides a corresponding number (here 4) ofcoefficients to the multiplier 314 for multiplication with the extractedparity bits. The result from the multiplier 314 is then fed to a summer318 which performs an exclusive-OR (XOR) operation. The summer 318 isdisposed in the path of a 4-bit portion of the private bus 306 andreceives the output of the multiplier 314 and a shifted 4-bit portion ofa syndrome associated with a prior stage error decoder. The summer 318acts as a shift register by outputting the accumulated 4-bits along theprivate bus to the next adjacent error decoder. For this specificexample, employing four syndrome generation circuits in parallel foreach error decoder enables the generation of a 16-bit syndrome for each128-bit read data word. The accumulating and shifting functionalitycarried out by the summers allows for a relatively low-cost pipeliningof the error syndromes associated with various read data words fromdifferent devices to propagate to the repair circuitry with littleimpact on performance of the memory system as a whole.

As noted above, and still referring to FIG. 3, one embodiment of thebuffer circuit 300 includes a C/A repair circuit 304 that employs repaircircuitry 312 to receive the pipelined accumulated syndromes from theerror decoders and carry out operations to determine faulty storagecells corresponding to “hard errors”, and assign substitute storagecells for future writes to the defective cells. The C/A repair circuit304 includes a primary C/A interface circuit CAp and a secondary C/Ainterface circuit CAs that connects to the primary interface circuit viaC/A signal path 314. The primary C/A interface circuit Cap receivescommand, control and address signals corresponding to write data wordstransferred from the memory controller 108. The secondary interfacecircuit distributes command, control and address signals to the memorydevices in, for example, a fly-by manner along a secondary C/A path 316.

Further referring to FIG. 3, the repair logic includes address logic 318having a syndrome input SYN, and an address input ADDR. For errordetection purposes, the address logic receives 16-bit error syndromessequentially pipelined from error decoder to error decoder via theprivate bus 306, and determines if the syndromes include a pointer to afaulty bit location. Repetitive errors correlating to a “hard” error (anerror caused by a structural defect, such as a faulty storage cell) arethen used to generate a tag that identifies the faulty cell address,with the address stored in an address memory 320. A substitute storagecell from a redundant memory 322 is then assigned to store a bitdirected to the faulty address.

For subsequent write operations to the faulty address, the address logic318 uses a tag comparison circuit 324 to compare incoming addresses toknown defective addresses stored in the address memory 320. When a “hit”is detected, indicating a matching address to a known faulty location,the bit designated for writing to the faulty cell is extracted via anextraction circuit 326 (disposed on each error decoder), and directed tothe assigned substitute cell in the redundant memory 322. For datareads, an insertion circuit 328 accesses the bit in the redundant memory322 and inserts it into the proper read data word location prior to theread data word being transferred across the DQ data path 308. For someembodiments, compare circuitry (not shown) may be employed to comparethe previously determined defective bit with the repair bit to moreaccurately determine the presence of a “hard” or “soft” error. In thismanner, if a “soft” error was involved, and did not repeat, the sparebit location may be used elsewhere, thereby freeing redundant resources.

The memory architecture above lends itself well to carrying out repairsat the manufacturing stage, such as when a memory module undergoes finalassembly and test, or during normal operation as a main memory systemfor computing resources. Failures identified during manufacture, such asin final module assembly and test, may be repaired, and the repairinformation stored in the nonvolatile memory 228, until retrieved uponusage in a memory system operating environment.

FIG. 4 shows a flowchart of steps that may be performed in accordancewith one embodiment of a repair method described herein, generallydesignated 400. The method seeks to take advantage of memory systemsthat employ error correction coding schemes, but without impacting thedesigns of the memory controller or memory devices. Thus, in response toa series of commands from the memory controller to retrieve a specifieddata word from a memory device, the specified data word (in thisexample, a 128 bit data word with an additional 16 parity bits) isaccessed, at 402, and transferred from the memory device along secondarydata paths, at 404, to a buffer, where the data is buffered, at 406.Address information associated with the buffered read data word is thencompared to stored addresses of known failures, at 408. If thecomparison results in a match, at 410, then a data bit from a remappedstorage cell is inserted into the bit location of the read data wordthat includes the known error, at 412, and the corrected data wordtransferred to the memory controller over the primary data paths, at414. Note that the correction to the data is not being carried out by adecoding of the associated ECC, but rather through a substitution ofdata from a redundant cell mapped to store a bit value originallyintended for a defective cell. Thus, the ECC is unaffected by the known(and corrected) error. If no fail is identified, the originally-accessedread data word is transferred, at 414. As the read data word istransferred to the memory controller, a copy of the data (correcteddata, if a fail was earlier identified and corrected) undergoeson-module error tracking and repair, at 416.

One embodiment of the error tracking and repair step 416 from FIG. 4 isshown in further detail by the flowchart of FIG. 5. The steps involvedecoding the read data word in the buffer in accordance with the errorcoding algorithm employed by the memory controller, at 502. Errorinformation is then generated, such as through decoding of the syndromeassociated with the data word, at 504. For one specific embodiment, thesyndromes may be decoded through use of multiply and divide operationsconsistent with multiplicand and divisor tables shown in FIG. 6 thatemploy possible nibbles with Kij coefficients such as those shown in thetable of FIG. 7. Plural syndromes associated with plural read data wordsmay then be sequentially pipelined along the private bus between DQ datapaths, at 506, eventually arriving at the C/A repair circuitry. Notethat since a repair is to be made for subsequent accesses to a failedstorage cell, the currently accessed data does not undergo a correctionat the buffer, but rather at the memory controller (if an error isdetected).

Further referring to FIG. 5, as a syndrome arrives at the C/A repaircircuitry, a determination of whether an error was detected is firstcarried out, at 508. This generally involves evaluating the syndrome,which not only detects the existence of an error, but also generates apointer to the bit location of the error in the read data word. If noerror is detected, no action takes place, at 510, and the next errorsyndrome is evaluated on a subsequent cycle. If an error is detected,then the pointer is evaluated to identify the location of the error, at512. For some embodiments, a counter or other indicator may be employedto determine whether the error is a single event, or repetitive innature, at 514. If the error is not repetitive (based on a predeterminedthreshold, for example), no further action may take place, at 516. Ifthe error is repetitive, an assumption may be made that the error is theresult of a failure in the associated memory cell, and the repair logicgenerates a tag entry for inclusion in the fail memory, at 518. The tagentry generally includes information such as the address information ofthe failed cell. For embodiments where the error tracking and repair iscarried out during a memory module test operation, the failed storageaddresses may be stored in nonvolatile memory mounted on the module.When the module is included within a memory system, the stored failureaddresses may be accessed from the nonvolatile memory and repaired, forexample, at system startup.

Further referring to FIG. 5, with the tag generated and stored in thefail memory, the repair logic may then assign a substitute storage cell,at 520, to store future data bits directed to the failed storage celladdress. A mapping is then generated, at 522, that associates the failedstorage location address to the newly assigned substitute storage cell.Subsequent write data directed to the failed address location will theninstead be extracted from the DQ data path internal to the buffer, anddirected to the substitute storage cell. Subsequent reads that includethat data bit will have the bit inserted into the read data word, asexplained above with respect to FIG. 4.

The memory module 200 described above is shown as a specificimplementation having two shared buffer circuits 212 and 214. In someembodiments, a single buffer circuit may be shared across all of thememory devices. An alternative embodiment of a buffered memory module800 that employs dedicated buffer circuits 802 for each memory device,often referred to as “micro-buffers”, is shown in FIG. 8. The module 800employs an architecture similar to the module 200 of FIG. 2, includingmemory devices 804 mounted on a module substrate 804. Buffer circuits806 are configured to, for example, be dedicated to respective memorydevices (or plural die in the case of stacked memory devices). For oneembodiment, each buffer circuit may include an error decoder andassociated CA logic, similar to that shown in FIG. 3, to carry out errortracking and repair on the module. While not shown in FIG. 8, microbuffers lend themselves well to being stacked with the memory devices incommon packages.

For other embodiments the employ a large number of memory modules, theerror tracking and repair functionality may be shared across two or moremodules. In such scenarios, the private syndrome bus that interfaces theDQ data paths within the buffer circuits may be extended from one moduleto another via an appropriate routing scheme.

Those skilled in the art will appreciate that the various embodimentsdescribed herein improve error correction abilities for memory systemsthat employ error correction schemes. For embodiments that allow forcorrections of an additional bit for a given data word, error coveragemay be extended by several orders of magnitude. Further, for some of theembodiments described herein, changes to the memory devices or thememory controller may be minimized, and instead incorporated into abuffer circuit that lends itself well to logic process technologies.

When received within a computer system via one or more computer-readablemedia, such data and/or instruction-based expressions of the abovedescribed circuits may be processed by a processing entity (e.g., one ormore processors) within the computer system in conjunction withexecution of one or more other computer programs including, withoutlimitation, net-list generation programs, place and route programs andthe like, to generate a representation or image of a physicalmanifestation of such circuits. Such representation or image maythereafter be used in device fabrication, for example, by enablinggeneration of one or more masks that are used to form various componentsof the circuits in a device fabrication process.

In the foregoing description and in the accompanying drawings, specificterminology and drawing symbols have been set forth to provide athorough understanding of the present invention. In some instances, theterminology and symbols may imply specific details that are not requiredto practice the invention. For example, any of the specific numbers ofbits, signal path widths, signaling or operating frequencies, componentcircuits or devices and the like may be different from those describedabove in alternative embodiments. Also, the interconnection betweencircuit elements or circuit blocks shown or described as multi-conductorsignal links may alternatively be single-conductor signal links, andsingle conductor signal links may alternatively be multi-conductorsignal links. Signals and signaling paths shown or described as beingsingle-ended may also be differential, and vice-versa. Similarly,signals described or depicted as having active-high or active-low logiclevels may have opposite logic levels in alternative embodiments.Component circuitry within integrated circuit devices may be implementedusing metal oxide semiconductor (MOS) technology, bipolar technology orany other technology in which logical and analog circuits may beimplemented. With respect to terminology, a signal is said to be“asserted” when the signal is driven to a low or high logic state (orcharged to a high logic state or discharged to a low logic state) toindicate a particular condition. Conversely, a signal is said to be“deasserted” to indicate that the signal is driven (or charged ordischarged) to a state other than the asserted state (including a highor low logic state, or the floating state that may occur when the signaldriving circuit is transitioned to a high impedance condition, such asan open drain or open collector condition). A signal driving circuit issaid to “output” a signal to a signal receiving circuit when the signaldriving circuit asserts (or deasserts, if explicitly stated or indicatedby context) the signal on a signal line coupled between the signaldriving and signal receiving circuits. A signal line is said to be“activated” when a signal is asserted on the signal line, and“deactivated” when the signal is deasserted. Additionally, the prefixsymbol “/” attached to signal names indicates that the signal is anactive low signal (i.e., the asserted state is a logic low state). Aline over a signal name (e.g., ‘<signal name>’) is also used to indicatean active low signal. The term “coupled” is used herein to express adirect connection as well as a connection through one or moreintervening circuits or structures. Integrated circuit device“programming” may include, for example and without limitation, loading acontrol value into a register or other storage circuit within the devicein response to a host instruction and thus controlling an operationalaspect of the device, establishing a device configuration or controllingan operational aspect of the device through a one-time programmingoperation (e.g., blowing fuses within a configuration circuit duringdevice production), and/or connecting one or more selected pins or othercontact structures of the device to reference voltage lines (alsoreferred to as strapping) to establish a particular device configurationor operation aspect of the device. The term “exemplary” is used toexpress an example, not a preference or requirement.

While the invention has been described with reference to specificembodiments thereof, it will be evident that various modifications andchanges may be made thereto without departing from the broader spiritand scope of the invention. For example, features or aspects of any ofthe embodiments may be applied, at least where practicable, incombination with any other of the embodiments or in place of counterpartfeatures or aspects thereof. Accordingly, the specification and drawingsare to be regarded in an illustrative rather than a restrictive sense.

1. (canceled)
 2. A memory module comprising: a substrate; a memorydevice disposed on the substrate, the memory device including a failurelocation storing a known error data bit; redundant storage having aredundant location to store a valid data bit corresponding to the knownerror data bit; and repair circuitry, in response to a read command foraccessing read data including the known error data bit, to substitutethe valid data bit for the known error data bit to generate correctedread data.
 3. The memory module according to claim 2, furthercomprising: failure storage to store a failure address corresponding tothe failure location.
 4. The memory module according to claim 3, furthercomprising: comparison circuitry to perform a comparison between anaddress associated with the read command and the failure address; andwherein the repair circuitry is to substitute the valid data bit for theknown error data bit based on the comparison.
 5. The memory moduleaccording to claim 2, further comprising: error circuitry to determinewhether an error exists in the corrected read data; wherein the repaircircuitry, upon detection of an error by the error circuitry, isoperative to repair a failure associated with the error; and errorstorage to store information regarding the repair for a subsequent readoperation.
 6. The memory module according to claim 5, wherein: the errorcircuitry is configured to pipeline the error information associatedwith the read data along an error bus that couples a data pathassociated with the read data to a second data path associated withsecond read data.
 7. The memory module according to claim 5, wherein:the repair circuitry is configured to repair the failure by assigning asubstitute storage cell for a failure storage cell corresponding to thefailure; and remapping subsequent accesses identifying the failurestorage cell to the substitute storage cell.
 8. The memory moduleaccording to claim 2, wherein the memory device comprises a dynamicrandom access memory (DRAM) integrated circuit (IC) chip.
 9. A method ofoperation in a memory module, comprising: storing a known error data bitin a storage location of a memory device; storing a valid data bitcorresponding to the known error data bit in redundant storage; andrepairing the known error data bit, in response to a read command foraccessing read data including the known error data bit, by substitutingthe valid data bit for the known error data bit to generate correctedread data.
 10. The method according to claim 9, further comprising:storing a failure address corresponding to the failure location.
 11. Themethod according to claim 10, further comprising: comparing an addressassociated with the read command and the failure address; andsubstituting the valid data bit for the known error data bit based onthe comparing.
 14. The method according to claim 9, further comprising:determining whether an error exists in the corrected read data; upondetecting an error in the corrected read data, repairing a failureassociated with the error; and storing information regarding therepairing for a subsequent read operation.
 15. The method according toclaim 14, further comprising: pipelining the error informationassociated with the read data along an error bus that couples a datapath associated with the read data to a second data path associated withsecond read data.
 16. The method according to claim 14, wherein therepairing of the failure associated with the error further comprises:assigning a substitute storage cell for a failure storage cellcorresponding to the failure; and remapping subsequent accessesidentifying the failure storage cell to the substitute storage cell. 17.A memory circuit, comprising: a dynamic random access memory (DRAM)device, the DRAM device including a failure location storing a knownerror data bit; redundant storage having a redundant location to store avalid data bit corresponding to the known error data bit; buffercircuitry to buffer data transfers between the DRAM device and a memorycontroller; and repair circuitry, in response to a read command foraccessing read data including the known error data bit, to substitutethe valid data bit for the known error data bit to generate correctedread data.
 18. The memory circuit according to claim 17, furthercomprising: failure storage to store a failure address corresponding tothe failure location.
 19. The memory circuit according to claim 18,further comprising: comparison circuitry to perform a comparison betweenan address associated with the read command and the failure address; andwherein the repair circuitry is to substitute the valid data bit for theknown error data bit based on the comparison.
 20. The memory circuit ofclaim 19, further comprising: error circuitry to determine whether anerror exists in the corrected read data; wherein the repair circuitry,upon detection of an error by the error circuitry, is operative torepair a failure associated with the error; and error storage to storeinformation regarding the repair for a subsequent read operation. 21.The memory circuit of claim 19, wherein the repair circuitry resides inthe buffer circuitry.